{"id":20,"date":"2024-04-04T01:33:46","date_gmt":"2024-04-03T22:33:46","guid":{"rendered":"https:\/\/sisu.ut.ee\/namurplus\/tof-fib-sims\/"},"modified":"2026-01-11T00:30:27","modified_gmt":"2026-01-10T22:30:27","slug":"tof-fib-sims","status":"publish","type":"page","link":"https:\/\/sisu.ut.ee\/namurplus\/tof-fib-sims\/?lang=en","title":{"rendered":"TOF-FIB-SIMS"},"content":{"rendered":"<p style=\"text-align: justify;\"><strong><a href=\"https:\/\/www.chem.ut.ee\/en\">Institute of Chemistry at University of Tartu<\/a><\/strong> has the capability to perform elemental analysis of solid surfaces and surface defects using a Physical Electronics nanoTOF II FIB-TOF-SIMS. The FIB-TOF-SIMS is an invaluable tool for quality control and defect analysis due to its very high surface sensitivity which is in the order of a few atomic\/molecular layers. In addition, the C60 ion source allows studying defects on thin organic layers and films as well as polymer defects and disorderings.<\/p>\n<p style=\"text-align: justify;\"><img loading=\"lazy\" decoding=\"async\" width=\"960\" height=\"720\" class=\"alignnone wp-image-45\" style=\"width: 643px; height: 482px; margin-left: 110px; margin-right: 110px;\" title=\"tof_fib_sims_kodulehele.png\" src=\"https:\/\/sisu.ut.ee\/wp-content\/uploads\/sites\/293\/tof_fib_sims_kodulehele.png\" alt=\"TOF-FIB-SIMS\" srcset=\"https:\/\/sisu.ut.ee\/wp-content\/uploads\/sites\/293\/tof_fib_sims_kodulehele.png 960w, https:\/\/sisu.ut.ee\/wp-content\/uploads\/sites\/293\/tof_fib_sims_kodulehele-300x225.png 300w, https:\/\/sisu.ut.ee\/wp-content\/uploads\/sites\/293\/tof_fib_sims_kodulehele-768x576.png 768w\" sizes=\"auto, (max-width: 960px) 100vw, 960px\"><\/p>\n<p style=\"text-align: justify;\">In addition to atomic layer analysis, the FIB-TOF-SIMS can be used to sputter the surface of the sample using the various ion sources (5kV Ar+, 5kV O-, 30kV C60++) and to construct a depth profile of the sample with sub-nanometer resolution.<\/p>\n<p style=\"text-align: justify;\">In case of macroscopic objects, a depth profile of the chemical composition can be constructed using sequential cutting of the sample using focussed Ga+ ion beam. 200\u00d7200 \u03bcm cross sections are sequentially analyzed to construct a 3D map of the chemical structure.<\/p>\n<p style=\"text-align: justify;\">It is possible to carry out measurements at different temperatures ranging from \u2212150\u00b0C up to 600\u00b0C.<\/p>\n<p style=\"text-align: justify;\">Due to the high mass resolution M\/\u0394M of up to 10,000, the TOF-SIMS can be used to distinguish between the different isotopes of elements, allowing studying of isotope markings of various biological or ionically conductive materials using oxygen-18 or deuterium.<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"alignnone wp-image-44\" style=\"margin-left: auto; margin-right: auto;\" title=\"tof-sims_v.jpg\" src=\"https:\/\/sisu.ut.ee\/wp-content\/uploads\/sites\/293\/tof-sims_v-scaled.jpg\" alt=\"tof-sims_v.jpg\" width=\"963\" height=\"455\" srcset=\"https:\/\/sisu.ut.ee\/wp-content\/uploads\/sites\/293\/tof-sims_v-scaled.jpg 2560w, https:\/\/sisu.ut.ee\/wp-content\/uploads\/sites\/293\/tof-sims_v-300x142.jpg 300w, https:\/\/sisu.ut.ee\/wp-content\/uploads\/sites\/293\/tof-sims_v-1024x484.jpg 1024w, https:\/\/sisu.ut.ee\/wp-content\/uploads\/sites\/293\/tof-sims_v-768x363.jpg 768w, https:\/\/sisu.ut.ee\/wp-content\/uploads\/sites\/293\/tof-sims_v-1536x726.jpg 1536w, https:\/\/sisu.ut.ee\/wp-content\/uploads\/sites\/293\/tof-sims_v-2048x968.jpg 2048w, https:\/\/sisu.ut.ee\/wp-content\/uploads\/sites\/293\/tof-sims_v-1920x908.jpg 1920w\" sizes=\"auto, (max-width: 963px) 100vw, 963px\"><\/p>\n<p style=\"text-align: justify;\"><strong>Services include:<\/strong><\/p>\n<ul style=\"text-align: justify;\">\n<li>Consultation \u2013 scientific and technological aspects will be discussed with a client and evaluated whether a given methodology is suitable for solving client problems;<\/li>\n<\/ul>\n<ul style=\"text-align: justify;\">\n<li>Training in the handling of samples;<\/li>\n<\/ul>\n<ul style=\"text-align: justify;\">\n<li>The analysis of samples using TOF-SIMS done by experienced operators;<\/li>\n<\/ul>\n<ul style=\"text-align: justify;\">\n<li>Help in the analysis of the measurement results and if needed, in interpreting them;<\/li>\n<\/ul>\n<ul style=\"text-align: justify;\">\n<li>Development \u2013 to work out and implement new methods for solving specific problems using our existing infrastructure;<\/li>\n<\/ul>\n<ul style=\"text-align: justify;\">\n<li>Collaboratory research \u2013 to solve more complex scientific or technological problems where a few short-term measurements would give inconclusive results.<\/li>\n<\/ul>\n<p style=\"text-align: justify;\">It is possible to organize training courses for engineers and technicians regarding the different methods of physical characterization of various materials.<\/p>\n<p style=\"text-align: justify;\">Contact person: <strong>Enn Lust <\/strong>(e-mail: <a href=\"mailto:enn.lust@ut.ee\">enn.lust@ut.ee<\/a>)<\/p>\n<p style=\"text-align: justify;\">Operators: <strong>Rait Kanarbik, Priit M\u00f6ller<\/strong><\/p>\n<p style=\"text-align: justify;\"><em>Estonian Research Infrastructures Roadmap object \u201eCenter of nanomaterials technologies and research (NAMUR+)\u201d is co-fundeded by European Regional Development Fund (projects \u201eNanomaterials \u2013 research and applications\u201c, 3.2.0304.12-0397, 01.02.2012-31.12.2015 and \u201eCenter of nanomaterials technologies and research\u201d, 2014-2020.4.01.16-0123, 01.01.2017-30.06.2022). The infrastructure is also supported by the Estonian Research Council (projects TARISTU24-TK26, IUT20-54, and TT13).<\/em><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Institute of Chemistry at University of Tartu has the capability to perform elemental analysis of solid surfaces and surface defects using a Physical Electronics nanoTOF II FIB-TOF-SIMS. The FIB-TOF-SIMS is an invaluable tool for quality control and defect analysis due &#8230;<\/p>\n","protected":false},"author":157,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_acf_changed":false,"inline_featured_image":false,"footnotes":""},"class_list":["post-20","page","type-page","status-publish","hentry"],"acf":[],"_links":{"self":[{"href":"https:\/\/sisu.ut.ee\/namurplus\/wp-json\/wp\/v2\/pages\/20","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/sisu.ut.ee\/namurplus\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/sisu.ut.ee\/namurplus\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/sisu.ut.ee\/namurplus\/wp-json\/wp\/v2\/users\/157"}],"replies":[{"embeddable":true,"href":"https:\/\/sisu.ut.ee\/namurplus\/wp-json\/wp\/v2\/comments?post=20"}],"version-history":[{"count":3,"href":"https:\/\/sisu.ut.ee\/namurplus\/wp-json\/wp\/v2\/pages\/20\/revisions"}],"predecessor-version":[{"id":443,"href":"https:\/\/sisu.ut.ee\/namurplus\/wp-json\/wp\/v2\/pages\/20\/revisions\/443"}],"wp:attachment":[{"href":"https:\/\/sisu.ut.ee\/namurplus\/wp-json\/wp\/v2\/media?parent=20"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}